 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. http://onsemi.com * 350 V Collector-Emitter Sustaining Voltage * Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain - 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1.0 A/100 V @ 1 Second High fT * * * 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS 230 WATTS MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 350 350 5.0 350 15 30 1.5 230 1.84 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts C/W C MJL 4xxxA LLYWW 1 2 3 TO-264 CASE 340G STYLE 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC Max 0.54 Unit C/W 1 BASE 3 EMITTER 2 COLLECTOR MJL4xxxA xxx LL Y WW = Device Code = 281 OR 302 = Location Code = Year = Work Week 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ORDERING INFORMATION Device MJL4281A MJL4302A Package TO-264 TO-264 Shipping 25 Units/Rail 25 Units/Rail Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 July, 2003 - Rev. 1 Publication Order Number: MJL4281A/D MJL4281A (NPN) MJL4302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Collector Cut-off Current (VCE = 200 V, IB = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1.0 s (non-repetitive) (VCE = 100 Vdc, t = 1.0 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) Emitter-Base Saturation Voltage (IC = 8.0 Adc, IB = 0.8 A) Base-Emitter ON Voltage (IC = 8.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) fT 35 Cob - 600 - pF MHz hFE 80 80 80 80 50 10 VCE(sat) - VBE(sat) - VBE(on) - 1.5 1.4 Vdc 1.0 Vdc 250 250 250 250 - - Vdc - IS/b 4.5 1.0 - - Adc VCE(sus) ICEO ICBO - IEBO - 5.0 50 mAdc 350 100 Vdc mAdc mAdc Symbol Min Max Unit http://onsemi.com 2 MJL4281A (NPN) MJL4302A (PNP) TYPICAL CHARACTERISTICS 1000 1000 hFE, DC CURRENT GAIN TJ = 100C TJ = 25C hFE, DC CURRENT GAIN TJ = 100C 100 TJ = 25C 100 10 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain, VCE = 5 V, NPN MJL4281A 1000 1000 Figure 2. DC Current Gain, VCE = 5 V, PNP MJL4302A hFE, DC CURRENT GAIN TJ = 100C TJ = 25C hFE, DC CURRENT GAIN TJ = 100C 100 TJ = 25C 100 10 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain, VCE = 20 V, NPN MJL4281A 1.4 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.01 Vce(sat) TJ = 25C Ic/Ib = 10 10 100 Vbe(sat) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 Figure 4. DC Current Gain, VCE = 20 V, PNP MJL4302A Vbe(sat) Vce(sat) TJ = 25C Ic/Ib = 10 10 100 0.1 1 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Typical Saturation Voltage, NPN MJL4281A Figure 6. Typical Saturation Voltage, PNP MJL4302A http://onsemi.com 3 MJL4281A (NPN) MJL4302A (PNP) TYPICAL CHARACTERISTICS 1.4 VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 VBE(on), BASE-EMITTER VOLTAGE (V) 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 0.0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Typical Base-Emitter Voltages, NPN MJL4281A Figure 8. Typical Base-Emitter Voltages, PNP MJL4302A fT, CURRENT BANDWIDTH PRODUCT (MHz) 70 60 50 40 VCE = 10 V 30 20 10 0 TJ = 25C ftest = 1 MHz 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE = 5 V fT, CURRENT BANDWIDTH PRODUCT (MHz) 70 60 VCE = 5 V 50 40 30 20 10 0 0.1 TJ = 25C ftest = 1 MHz 1 10 VCE = 10 V Figure 9. Typical Current Gain Bandwidth Product, NPN MJL4281A 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 10 mS 10 1 Sec 1 Figure 10. Typical Current Gain Bandwidth Product, PNP MJL4302A 100 10 mS 10 1 Sec 1 100 mS 100 mS 0.1 0.1 0.01 1 TJ = 25C 10 100 1000 0.01 1 TJ = 25C 10 100 1000 Vce, COLLECTOR-EMITTER VOLTAGE (V) Vce, COLLECTOR-EMITTER VOLTAGE (V) Figure 11. Active Region Safe Operating Area, NPN MJL4281A Figure 12. Active Region Safe Operating Area, PNP MJL4302A http://onsemi.com 4 MJL4281A (NPN) MJL4302A (PNP) PACKAGE DIMENSIONS TO-3PBL (TO-264) CASE 340G-02 ISSUE H 0.25 (0.010) -B- -Q- M TB M -T- C U N A R -Y- P K 1 2 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ S STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 5 MJL4281A (NPN) MJL4302A (PNP) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJL4281A/D |
Price & Availability of MJL4302A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |